Toshiba Unveils 80V N-Channel Power MOSFET For AI Data Centres
KUALA LUMPUR, June 30 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched “TPM1R408RH”, an 80-volt (V) N-channel power MOSFET fabricated using U-MOS11-H, its latest-generation process.
Toshiba in a statement said the MOSFET targets applications such as switched-mode power supplies for industrial equipment used in artificial intelligence (AI) data centres and communications base stations.
According to Toshiba, growing AI workloads and advances in communications infrastructure are driving demand for more efficient, compact and lower electromagnetic interference (EMI) switched-mode power supplies.
The company said reducing power losses is essential to improving energy efficiency, thermal management and overall system performance.
TPM1R408RH features an optimised device structure and realises a drain-source on-resistance of 1.4 milliohms (mΩ), approximately 26 per cent lower than that of TPM1R908QM, an 80V Toshiba product fabricated using its previous-generation U-MOS X-H process.
The MOSFET also suppresses voltage spikes during switching, helping reduce EMI and simplify filter and snubber circuit design.
The new product adopts the SOP Advance(E) package, which delivers approximately 65 per cent lower package resistance and approximately 15 per cent lower thermal resistance than Toshiba’s current SOP Advance(N) package.
A supplier of advanced semiconductor and storage solutions, Toshiba will continue to expand its lineup of power MOSFETs that improve power supply efficiency, thereby helping to reduce power consumption in industrial equipment.
-- BERNAMA